First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

• Muhammad Atif Sattar,
• Najwa Al Bouzieh,
• Maamar Benkraouda and
• Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

• the power factor (PF = S2σ) which is connected with the electrical transport [8][9] and the lowest value of κtot [10]. To date, a considerable amount of research has been performed to enhance the ZT value. For instance, by lowering the value of the lattice thermal conductivity (through all-scale

• filtering [21], and quantum confinement effects [22]). Many of these methods focus on reducing the lattice thermal conductivity and try to preserve a high power factor (PF). On the other hand, a high figure of merit can be obtained in pristine TE materials that have intrinsically minimal thermal

• ·K−1 at 400 K. After 400 K, κtot gradually starts to linearly increase and has the highest value of 2.15 W·m−1·K−1 at 1000 K. The power factor is also calculated to approximate the figure of merit for the studied π-SnSe alloy, which is presented in Figure 9d as a function of temperature. The PF has a

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• doping parameters. These results are in good agreement with numerical simulations of the doping process applied to silicon nanowires. These devices, based on doped nanowire forests, offer a possible route for the exploitation of the high power factor of silicon, which, combined with the very low thermal

• sustainable. Silicon has a very high power factor S2σ [1][2][3][4] (S is the Seebeck coefficient and σ is the electrical conductivity). This, combined with the reduced thermal conductivity when nanostructured [5][6][7][8][9][10], makes it very suitable for thermoelectric applications. As added value, silicon

• fabricated on the top of a silicon nanowire forest, which can be achieved by copper electrodeposition [18]. 2) The optimum doping concentration of the nanowires for the exploitation of the maximum power factor of silicon [3] needs to be found. Both the Seebeck coefficient and the electrical conductivity

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi₂Te₃ matrix

• Srashti Gupta,
• Dinesh Chandra Agarwal,
• Bathula Sivaiah,
• Sankarakumar Amrithpandian,
• Kandasami Asokan,
• Ajay Dhar,
• Binaya Kumar Panigrahi,
• Devesh Kumar Avasthi and
• Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

• -type behavior) for 5% Ag which is increased ca. five-fold in comparison to Ag-free Bi2Te3, whereas for samples with the same content (5% Ag) annealed at 773 K the increment in thermopower is only about three-fold with a 6.9-fold enhancement of the power factor (S2σ). The effect of size and shape of the

• nanoparticles on thermoelectric properties can be understood on the basis of a carrier-filtering effect that results in an increase in thermopower along with a control over the reduction in electrical conductivity to maintain a high power factor yielding a high figure of merit. Keywords: bismuth telluride

• ; nanoparticles; power factor; thermoelectric power; Introduction Bismuth telluride (Bi2Te3) is an important semiconductor widely used as thermoelectric (TE) material for room-temperature applications to convert waste heat into electricity. The efficiency of a TE material can be defined by figure of merit (ZT

Enhancing the thermoelectric figure of merit in engineered graphene nanoribbons

• Hatef Sadeghi,
• Sara Sangtarash and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 1176–1182, doi:10.3762/bjnano.6.119

• thermoelectric device can be enhanced by increasing the power factor (S2GT) or by decreasing the thermal conductance, there is a need to simultaneously increase the Seebeck coefficient and electrical conductance, while reducing in thermal conductance. Since these factors are correlated, increasing ZT to values

• -temperature thermoelectric figure of merit ZTe, the power factor GS2T, the thermal conductance κ and the Seebeck coefficient S of the structures shown in Figure 1. These demonstrate that by drilling a pore in both monolayer and bilayer graphene and tuning the Fermi energy, ZTe is significantly improved. This

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• conductivity kt. Materials for thermoelectricity Several experimental works on thermoelectric materials are devoted to maximize the power factor S2σ, which is proportional to the power delivered to the load RL. Given two heat sources (or better a heat source TH and a heat sink TC), the optimization of S2σ

• thermoelectric power [16]. The maximization of the power factor S2σ is important in those applications that require a power as high as possible, and that have enough thermal energy available on the hot source. However, in many practical applications, one of the key points is to exploit as much as possible the

Integration of ZnO and CuO nanowires into a thermoelectric module

• Dario Zappa,
• Simone Dalola,
• Guido Faglia,
• Elisabetta Comini,
• Matteo Ferroni,
• Caterina Soldano,
• Vittorio Ferrari and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2014, 5, 927–936, doi:10.3762/bjnano.5.106

• ) performance of a material, including the thermal conductivity κ, the electrical conductivity σ and the Seebeck coefficient S. Further, the efficiency of a thermoelectric device depends on the thermoelectric power factor (TPF) and the figure of merit (ZT) of the material, which are defined as S2σ and S2Tσ/κ

• (Table 1). Thermoelectric power factor (TPF) was estimated for both CuO and ZnO nanowires, based on sheet resistance Rs. The electrical conductivity was calculated as σ = 1/(Rs·h), where h is the thickness of each strip. We found values of σ of 2.0 S/m for copper oxide and 0.7 S/m for zinc oxide. While

• influence of electrical conductivity in the expression of material thermoelectric power factor, it turns out that TPFCuO is much higher than TPFZnO, in particular 369.8 nW/(mK2) for CuO and 8.1 nW/(mK2) for ZnO nanowires. The performance of the prototype thermoelectric module will be thus somehow limited by

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• due to theoretical studies predicting a large enhancement of the thermoelectric efficiency, given by the so-called figure of merit ZT, ZT = S2·σ·T/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the thermal conductivity and T is the temperature. The power factor (S2σ) of